In situ dielectric etch process technology for advanced leading edge production worthy etch applications

In situ integrated dielectric etch processes are developed for advanced applications, such as self aligned contact and dual damascene structures, in the inductively coupled parallel plate semiconducting chamber. The integrated, in situ process steps include BARC opening, oxide or low k etch with high etch rate and high selectivity to nitride, resist/polymer strip, and nitride removal. This in situ capability will provide significant productivity benefits for structures that require multiple sequential process steps typically involving multiple chambers or systems.