在SIMS中浅深度剖面中bn - δ掺杂多层参考材料的评价

Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT. Pub Date : 2004-06-15 DOI:10.1109/IWJT.2002.1225199

S. Yoshikawa, F. Toujou, Y. Homma, H. Takenaka, S. Hayashi, M. Inoue, K. Goto, R. Shimizu

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引用次数: 5

摘要

我们正在开发用于二次离子质谱(SIMS)浅深度剖面的多层参考材料。本文从SIMS分析的角度，展示了氮化硼(BN)/硅(Si)多层材料作为浅深度剖面参考材料的潜力。

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Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS

We are developing multilayer reference materials for shallow depth profiling in secondary ion mass spectrometry (SIMS). In this report, the potential of boron-nitride (BN)/silicon (Si) multilayers as the reference materials for shallow depth profiling is shown from the standpoint of SIMS analyses.

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Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.

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