特邀演讲2:EDA拯救硅路线图

T. Williams
{"title":"特邀演讲2:EDA拯救硅路线图","authors":"T. Williams","doi":"10.1109/ATS.2007.108","DOIUrl":null,"url":null,"abstract":"Since the invention of the transistor nearly six decades ago, new technology nodes have been added approximately every two years. This march of progress has yielded smaller transistors that run about 40% faster with each geometry scaling fulfilling the promise and industry-defining mantra of \"smaller, faster, cheaper!\", and harder to Test. Now, in the realm of 65- and 45-nanometer design and manufacturing the industry is confronted by multiple complex and stubborn challenges: silicon technology keeps shrinking but doesn't advance in speed at the same rate. The recent high-k dielectric announcements have yet to be proven manufacturable, and copper interconnect is already hitting the wall. We are driving to the edge of the silicon roadmap, but there is no viable alternative to CMOS within our reach. Not coincidentally, several companies are announcing their intention to stop internal R&D at the 45 nanometer node and use foundry-supplied processes at 32 nanometers and below. The electronics industry ecosystem is at a fork in the road: those few who can afford it will keep rushing to 45 nanometers and maybe beyond, to 32 and 25 nanometers; the rest will hold at 130 or perhaps 90 nanometers, trying to get the most out of those processes that they can. In both cases it is EDA that will come to the rescue. This is true for the Test area as well. We will show how new tools in test will be needed to keep up with these very hard requirements and how EDA Teat can help. EDA innovation is the gear that enables design for manufacturing and yield (which encompasses design for test), design for low power, and design for variability. EDA is not only the enabler for quality in electronic design; it is truly \"where electronics begins.\"","PeriodicalId":289969,"journal":{"name":"16th Asian Test Symposium (ATS 2007)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Invited Talk 2: EDA to the Rescue of the Silicon Roadmap\",\"authors\":\"T. Williams\",\"doi\":\"10.1109/ATS.2007.108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Since the invention of the transistor nearly six decades ago, new technology nodes have been added approximately every two years. This march of progress has yielded smaller transistors that run about 40% faster with each geometry scaling fulfilling the promise and industry-defining mantra of \\\"smaller, faster, cheaper!\\\", and harder to Test. Now, in the realm of 65- and 45-nanometer design and manufacturing the industry is confronted by multiple complex and stubborn challenges: silicon technology keeps shrinking but doesn't advance in speed at the same rate. The recent high-k dielectric announcements have yet to be proven manufacturable, and copper interconnect is already hitting the wall. We are driving to the edge of the silicon roadmap, but there is no viable alternative to CMOS within our reach. Not coincidentally, several companies are announcing their intention to stop internal R&D at the 45 nanometer node and use foundry-supplied processes at 32 nanometers and below. The electronics industry ecosystem is at a fork in the road: those few who can afford it will keep rushing to 45 nanometers and maybe beyond, to 32 and 25 nanometers; the rest will hold at 130 or perhaps 90 nanometers, trying to get the most out of those processes that they can. In both cases it is EDA that will come to the rescue. This is true for the Test area as well. We will show how new tools in test will be needed to keep up with these very hard requirements and how EDA Teat can help. EDA innovation is the gear that enables design for manufacturing and yield (which encompasses design for test), design for low power, and design for variability. EDA is not only the enabler for quality in electronic design; it is truly \\\"where electronics begins.\\\"\",\"PeriodicalId\":289969,\"journal\":{\"name\":\"16th Asian Test Symposium (ATS 2007)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"16th Asian Test Symposium (ATS 2007)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ATS.2007.108\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"16th Asian Test Symposium (ATS 2007)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS.2007.108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

自从近60年前晶体管发明以来,大约每两年就会增加新的技术节点。这一进步已经产生了更小的晶体管,每缩小一个几何尺寸,运行速度就快40%左右,实现了“更小、更快、更便宜”的承诺和行业定义的口号,而且更难测试。现在,在65纳米和45纳米的设计和制造领域,该行业面临着多种复杂而顽固的挑战:硅技术不断缩小,但速度却没有以同样的速度发展。最近宣布的高k介电介质尚未被证明是可制造的,铜互连已经碰壁了。我们正在走向硅路线图的边缘,但在我们的范围内没有可行的CMOS替代品。并非巧合的是,一些公司宣布他们打算停止在45纳米节点的内部研发,并使用代工厂提供的32纳米及以下工艺。电子工业的生态系统正处在一个岔路口:那些少数能负担得起的人将继续向45纳米冲刺,甚至更远,向32和25纳米冲刺;其余的将保持在130或90纳米,试图从这些过程中获得最大的好处。在这两种情况下,EDA都将出手相助。对于Test区域也是如此。我们将展示如何在测试中使用新工具来满足这些非常困难的需求,以及EDA Teat如何提供帮助。EDA创新是实现制造和产量设计(包括测试设计)、低功耗设计和可变性设计的齿轮。EDA不仅是电子设计质量的推动者;这是真正的“电子产品开始的地方”。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Invited Talk 2: EDA to the Rescue of the Silicon Roadmap
Since the invention of the transistor nearly six decades ago, new technology nodes have been added approximately every two years. This march of progress has yielded smaller transistors that run about 40% faster with each geometry scaling fulfilling the promise and industry-defining mantra of "smaller, faster, cheaper!", and harder to Test. Now, in the realm of 65- and 45-nanometer design and manufacturing the industry is confronted by multiple complex and stubborn challenges: silicon technology keeps shrinking but doesn't advance in speed at the same rate. The recent high-k dielectric announcements have yet to be proven manufacturable, and copper interconnect is already hitting the wall. We are driving to the edge of the silicon roadmap, but there is no viable alternative to CMOS within our reach. Not coincidentally, several companies are announcing their intention to stop internal R&D at the 45 nanometer node and use foundry-supplied processes at 32 nanometers and below. The electronics industry ecosystem is at a fork in the road: those few who can afford it will keep rushing to 45 nanometers and maybe beyond, to 32 and 25 nanometers; the rest will hold at 130 or perhaps 90 nanometers, trying to get the most out of those processes that they can. In both cases it is EDA that will come to the rescue. This is true for the Test area as well. We will show how new tools in test will be needed to keep up with these very hard requirements and how EDA Teat can help. EDA innovation is the gear that enables design for manufacturing and yield (which encompasses design for test), design for low power, and design for variability. EDA is not only the enabler for quality in electronic design; it is truly "where electronics begins."
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