{"title":"RF-MEMS电容开关C-V测量方法的比较","authors":"Jiahui Wang, C. Salm, J. Schmitz","doi":"10.1109/ICMTS.2013.6528145","DOIUrl":null,"url":null,"abstract":"The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.","PeriodicalId":142589,"journal":{"name":"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Comparison of C-V measurement methods for RF-MEMS capacitive switches\",\"authors\":\"Jiahui Wang, C. Salm, J. Schmitz\",\"doi\":\"10.1109/ICMTS.2013.6528145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.\",\"PeriodicalId\":142589,\"journal\":{\"name\":\"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2013.6528145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2013.6528145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of C-V measurement methods for RF-MEMS capacitive switches
The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.
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