基于斩波稳定技术的低噪声CMOS带隙基准电压

2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2020-10-23 DOI:10.1109/ICICM50929.2020.9292198

Yuliang Ma, Chunfeng Bai, Yang Wang, Donghai Qiao

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引用次数: 2

摘要

本文采用斩波稳定降噪技术，设计了一种低噪声CMOS带隙基准电压。详细讨论了斩波技术的工作原理，并采用高温高压CMOS 0.18 μ m工艺设计制作了相应的电路。实验结果表明，在1Hz频率下，输出噪声功率谱密度降低了60dB。此外，在+ 5v电源下，未修剪电压基准在- 45°C至+175°C范围内的温度系数为43ppm/°C(平均值)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Low Noise CMOS Bandgap Voltage Reference Using Chopper Stabilization Technique

A low noise CMOS bandgap voltage reference is designed using the noise reduction technique of chopper stabilization in this paper. The mechanism of the proposed chopper technique is discussed in detail and the corresponding circuit was designed and fabricated using a high temperature and high pressure CMOS 0.18\mu m$ technology. The experimental results show that the output noise power spectral density was reduced by 60dB at 1Hz. In addition, the untrimmed voltage reference has a temperature coefficient in the −45°C to +175°C range of 43ppm/°C (mean) at a +5 V power supply.

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2020 IEEE 5th International Conference on Integrated Circuits and Microsystems (ICICM)

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