利用零逻辑门启动特性的弱异步复位(ARES) PUF

Sreeja Chowdhury, R. Y. Acharya, William Boullion, A. Felder, Mark Howard, J. Di, Domenic Forte
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引用次数: 4

摘要

物理不可克隆函数(puf)在数字和模拟领域的安全原语研究非常广泛,但对异步电路的安全原语研究还很少。在本文中,我们提出了一种新的优化方法来设计一个弱异步复位(ARES) PUF,该PUF利用N Null常规逻辑(NCL)门的阈值M的随机启动特性作为熵源。我们采用了两种不同的方法来设计ARES PUF。前者采用基于线性规划优化的传统延迟匹配技术,后者采用以延迟匹配为适应度函数的遗传算法。这两种方法都解释了分析和设计规范,需要模拟NCL TH22门,以实现PUF特性。以2门中的2门(TH22)和4门中的4门(TH44)作为测试用例进行评价和比较。利用HSPICE中90nm和65nm初始延迟匹配技术的仿真结果表明,所提出的ARES PUF在V_{DD} $变化(±10%)范围内的唯一性为49.98%,可靠性为96.53%,在温度变化(0^{\circ}C ~ 80^{\circ}C)$范围内的可靠性为93.39%。而GA方法可以优化NCL电池,在65nm处形成具有49%唯一性的PUF,在$V_{DD} $上的平均可靠性为96.4%,在温度上的平均可靠性为93.82%。在TSMC 90nm技术节点上提出的TH22的初步硅测试结果显示,与标准TH22栅极相比,其唯一性提高了34%,在重复测量(噪声)中,最佳情况唯一性为53.3%,可靠性为100%。与标准TH22不同,标准TH44的最佳情况唯一性为47.62%,可靠性为98.1%
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Weak Asynchronous RESet (ARES) PUF Using Start-up Characteristics of Null Conventional Logic Gates
Physical unclonable functions (PUFs) are widely researched security primitive in the digital and analog domain but have yet to be explored for asynchronous circuits. In this paper, we propose novel optimization methods to design a weak Asynchronous RESet (ARES) PUF that exploits random start-up characteristics of Threshold M of N Null Conventional Logic (NCL) gates as a source of entropy. We employ two different methods to design the ARES PUF. The first includes traditional delay matching techniques using linear programming-based optimization, whereas the second one uses the genetic algorithm (GA) with delay matching as a fitness function. Both methodologies are explained with analysis and design specifications required to model NCL TH22 gates to achieve PUF characteristics. Threshold 2 of 2 (TH22) and 4 of 4 (TH44) gates are used as test cases for evaluation and comparison. Simulation results using initial delay matching techniques at 90nm and 65nm technology in HSPICE shows that the proposed ARES PUF has a uniqueness of 49.98% and reliability of 96.53% across $V_{DD} $ variation (± 10%) and 93.39% across temperature variation $(0^{\circ}C- 80^{\circ}C)$. Whereas, the GA method can optimize NCL cells to form a PUF with 49% uniqueness at 65nm with an average reliability of 96.4% across $V_{DD} $ and 93.82% across temperature. Preliminary silicon results for proposed TH22 at TSMC 90nm technology node shows a 34% improvement in uniqueness compared to standard TH22 gate with best-case uniqueness of 53.3% and reliability of 100% respectively across repeated measurements (noise). Unlike standard TH22, standard TH44 performs better with 47.62% best-case uniqueness and 98.1% reliability.1
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