三维存储/逻辑应用中使用无凹凸互连的超薄片上晶圆工艺的发展

N. Maeda, H. Kitada, K. Fujimoto, Y. Kim, S. Kodama, S. Yoshimi, M. Akazawa, Y. Mizushima, T. Ohba
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引用次数: 3

摘要

首次成功地制备了基于堆叠优先和无凹凸互连的片上堆叠结构。芯片采用背对背的方式排列并粘接在晶圆上,芯片之间的间隙采用有机材料填充,不形成空隙。晶圆上的芯片薄至5 μm。在芯片外形成过孔。铜再分布线采用过孔先大马士革法形成。发现焊盘之间的漏电流低至背景电流。在多芯片COW堆叠的垂直布线中,实现了无故障和接近100%的成品率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of ultra-thin Chip-on-Wafer process using bumpless interconnects for three-dimensional memory/logic applications
Chip-on-Wafer (COW) stacking structure using stack-first and bumpless interconnects was successfully fabricated for the first time. Chips were arrayed and bonded onto the wafer by back-to-face and gap filling between chips were carried out using organic material without void formation. Chips on the wafer were thinned down to 5 μm. Via-holes were formed at off-chip area (outside the chip). Copper redistribution line was formed using the via-first Damascene method. Lower leakage current as low as back ground was found between pads. No failure and an approximate 100% yield were achieved in the vertical wiring for multi-chips COW stacking.
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