三维闭锁分析的测试模式

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292886

I. De Munari, R. Menozzi, M. Davoli, F. Fantini

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引用次数: 0

摘要

通过二维(2D)和二维(横截面)数值模拟，证明了三维(3D)锁存相互作用对典型CMOS结构的锁存行为有显著影响。设计了一种三维闭锁测试模式，以便对这种效应进行实验研究。第一个测量结果显示，如果使用普通的2D测试模式，可以忽略复杂的行为。

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A test pattern for three-dimensional latch-up analysis

By means of both cross-section and layout two-dimensional (2D) numerical simulations, three-dimensional (3D) latch-up interactions are demonstrated to significantly influence the latch-up behavior of a typical CMOS structure. A 3D latch-up test pattern is designed to allow the experimental study of such effects. The first measurement results show complex behaviors that can be overlooked if common 2D test patterns are used.<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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