IDDq测量对CMOS vlsi故障检测的影响

J. Hirase, M. Hamada
{"title":"IDDq测量对CMOS vlsi故障检测的影响","authors":"J. Hirase, M. Hamada","doi":"10.1109/ATS.1994.367239","DOIUrl":null,"url":null,"abstract":"In the final stages of VLSI testing, improved quality VLSI testing is an important subject for ensuring reliability in the forwarded VLSI market. On the other hand, developments in high integration technology have resulted in an increased number of blocks in VLSI devices and an increased number of gates for each terminal. Consequently, it has become more difficult to improve the quality of VLSI tests. We have developed a new test method in addition to conventional testing methods intended for improving the test coverage in VLSI tests. This new test method analyzes the relationship between IDDq (Quiescent Power Supply Current) of DUT and DUT failure by applying the concept of the toggle rate. Accordingly, in this paper we report that the results of IDDq testing confirm a correlation with defect level.<<ETX>>","PeriodicalId":182440,"journal":{"name":"Proceedings of IEEE 3rd Asian Test Symposium (ATS)","volume":"380 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"The effect of fault detection by IDDq measurement for CMOS VLSIs\",\"authors\":\"J. Hirase, M. Hamada\",\"doi\":\"10.1109/ATS.1994.367239\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the final stages of VLSI testing, improved quality VLSI testing is an important subject for ensuring reliability in the forwarded VLSI market. On the other hand, developments in high integration technology have resulted in an increased number of blocks in VLSI devices and an increased number of gates for each terminal. Consequently, it has become more difficult to improve the quality of VLSI tests. We have developed a new test method in addition to conventional testing methods intended for improving the test coverage in VLSI tests. This new test method analyzes the relationship between IDDq (Quiescent Power Supply Current) of DUT and DUT failure by applying the concept of the toggle rate. Accordingly, in this paper we report that the results of IDDq testing confirm a correlation with defect level.<<ETX>>\",\"PeriodicalId\":182440,\"journal\":{\"name\":\"Proceedings of IEEE 3rd Asian Test Symposium (ATS)\",\"volume\":\"380 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE 3rd Asian Test Symposium (ATS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ATS.1994.367239\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE 3rd Asian Test Symposium (ATS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ATS.1994.367239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

在超大规模集成电路测试的最后阶段,提高超大规模集成电路测试质量是保证未来超大规模集成电路市场可靠性的重要课题。另一方面,高集成度技术的发展导致VLSI器件中的块数量增加,每个终端的门数量增加。因此,提高超大规模集成电路测试质量变得更加困难。我们开发了一种新的测试方法,除了传统的测试方法,旨在提高VLSI测试的测试覆盖率。该测试方法采用切换率的概念,分析了被测件的静态电源电流(IDDq)与被测件故障之间的关系。因此,在本文中,我们报告了IDDq测试的结果证实了与缺陷级别的相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The effect of fault detection by IDDq measurement for CMOS VLSIs
In the final stages of VLSI testing, improved quality VLSI testing is an important subject for ensuring reliability in the forwarded VLSI market. On the other hand, developments in high integration technology have resulted in an increased number of blocks in VLSI devices and an increased number of gates for each terminal. Consequently, it has become more difficult to improve the quality of VLSI tests. We have developed a new test method in addition to conventional testing methods intended for improving the test coverage in VLSI tests. This new test method analyzes the relationship between IDDq (Quiescent Power Supply Current) of DUT and DUT failure by applying the concept of the toggle rate. Accordingly, in this paper we report that the results of IDDq testing confirm a correlation with defect level.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信