InAlAs/InGaAs hemt扭结效应的新物理模型

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.497214

Mark H Somervillet, Jes6s A Del Alamot, William Hoke

{"title":"InAlAs/InGaAs hemt扭结效应的新物理模型","authors":"Mark H Somervillet, Jes6s A Del Alamot, William Hoke","doi":"10.1109/IEDM.1995.497214","DOIUrl":null,"url":null,"abstract":"New measurements providing direct evidence linking the kink effect and impact ionization in InAlAs/InGaAs HEMTs are reported. Current kink models are not consistent with our findings. We propose a new mechanism, barrier-induced hole pile-up at the source, to explain the kink. The new model is shown to be consistent with both room temperature and low temperature measurements. These results allow formulation of a simple equivalent circuit model of the kink.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"267 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":"{\"title\":\"A new physical model for the kink effect on InAlAs/InGaAs HEMTs\",\"authors\":\"Mark H Somervillet, Jes6s A Del Alamot, William Hoke\",\"doi\":\"10.1109/IEDM.1995.497214\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New measurements providing direct evidence linking the kink effect and impact ionization in InAlAs/InGaAs HEMTs are reported. Current kink models are not consistent with our findings. We propose a new mechanism, barrier-induced hole pile-up at the source, to explain the kink. The new model is shown to be consistent with both room temperature and low temperature measurements. These results allow formulation of a simple equivalent circuit model of the kink.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"267 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"37\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.497214\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.497214","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 37

摘要

新的测量结果为InAlAs/InGaAs hemt中的扭结效应和撞击电离提供了直接证据。目前的扭结模型与我们的发现不一致。我们提出了一种新的机制，即在源处障碍物引起的洞堆积，来解释这种扭结。新模型与室温和低温测量结果一致。这些结果允许一个简单的等效电路模型的扭结公式。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A new physical model for the kink effect on InAlAs/InGaAs HEMTs

New measurements providing direct evidence linking the kink effect and impact ionization in InAlAs/InGaAs HEMTs are reported. Current kink models are not consistent with our findings. We propose a new mechanism, barrier-induced hole pile-up at the source, to explain the kink. The new model is shown to be consistent with both room temperature and low temperature measurements. These results allow formulation of a simple equivalent circuit model of the kink.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of International Electron Devices Meeting

自引率

0.00%

发文量