{"title":"一个多功能的低成本智能电源技术平台，适用于广泛的电流和电压范围","authors":"Zhi Lin, Hao Hu, Junji Cheng, Xingbi Chen","doi":"10.1109/BCTM.2013.6798152","DOIUrl":null,"url":null,"abstract":"A versatile low-cost manufacturing technology, which is based on the optimum variation lateral doping technique, is proposed for smart power ICs in this paper. The proposed technology is capable to combine the lateral and vertical high voltage (> 800V) devices on a single chip, which is suitable for applications over broad current ranges. It is fully compatible with BiCMOS process and has been implemented on a standard CMOS line with only 11 masks. Devices with various breakdown voltages, as well as a switched-mode power supply chip, are successfully fabricated on this platform. The measured results are displayed and discussed in detail.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A versatile low-cost smart power technology platform for applications over broad current and voltage ranges\",\"authors\":\"Zhi Lin, Hao Hu, Junji Cheng, Xingbi Chen\",\"doi\":\"10.1109/BCTM.2013.6798152\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A versatile low-cost manufacturing technology, which is based on the optimum variation lateral doping technique, is proposed for smart power ICs in this paper. The proposed technology is capable to combine the lateral and vertical high voltage (> 800V) devices on a single chip, which is suitable for applications over broad current ranges. It is fully compatible with BiCMOS process and has been implemented on a standard CMOS line with only 11 masks. Devices with various breakdown voltages, as well as a switched-mode power supply chip, are successfully fabricated on this platform. The measured results are displayed and discussed in detail.\",\"PeriodicalId\":272941,\"journal\":{\"name\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2013.6798152\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2013.6798152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A versatile low-cost smart power technology platform for applications over broad current and voltage ranges
A versatile low-cost manufacturing technology, which is based on the optimum variation lateral doping technique, is proposed for smart power ICs in this paper. The proposed technology is capable to combine the lateral and vertical high voltage (> 800V) devices on a single chip, which is suitable for applications over broad current ranges. It is fully compatible with BiCMOS process and has been implemented on a standard CMOS line with only 11 masks. Devices with various breakdown voltages, as well as a switched-mode power supply chip, are successfully fabricated on this platform. The measured results are displayed and discussed in detail.
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