SiGe基双极技术，74ghz f/sub max/和11ps门延迟

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.499324

T. Meister, H. Schafer, M. Franosch, W. Molzer, K. Aufinger, U. Scheler, C. Walz, H. Stolz, S. Boguth, J. Bock

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引用次数: 64

摘要

提出了一种适用于高性能混合数字/模拟应用的外延硅基双极技术。发射极/基极过程是植入基极双聚自对准发射极/基极结构的明显sige -基极延伸。所制备的HBTs的最大截止频率f/sub - T/为61 GHz，最大振荡频率f/sub - max/为74 GHz, CML门延迟时间为11 ps。

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SiGe base bipolar technology with 74 GHz f/sub max/ and 11 ps gate delay

An epitaxial SiGe-base bipolar technology suited for very high performance mixed digital/analogue applications is presented. A key feature is the emitter/base process which is the obvious SiGe-base extension of the implanted base double-poly self-aligned emitter/base structure. The fabricated HBTs exhibit a maximum cut-off frequency f/sub T/ of 61 GHz, a maximum oscillation frequency f/sub max/ of 74 GHz and a record CML gate delay time of 11 ps.

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Proceedings of International Electron Devices Meeting

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