各种NAND快闪记忆体的干扰故障测试

2012 17th IEEE European Test Symposium (ETS) Pub Date : 2012-05-28 DOI:10.1109/ETS.2012.6233030

Chih-Sheng Hou, Jin-Fu Li

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引用次数: 0

摘要

只提供摘要形式。由于功能操作的特定机制，闪存容易发生干扰故障。此外，不同的NAND闪存在阵列组织和支持的功能操作上可能存在一些差异。因此，本文开发了覆盖各种类型NAND闪存中干扰故障的测试算法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Disturbance fault testing on various NAND flash memories

Summary form only given. Due to the specific mechanism of functional operations, flash memories are prone to disturbance faults. Furthermore, different NAND flash memories might have some differences on the array organizations and the supported functional operations. In this paper, therefore, test algorithms for covering the disturbance faults in various types of NAND flash memories are developed.

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2012 17th IEEE European Test Symposium (ETS)

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