{"title":"ISL70061SEH和ISL70062SEH PMOS和NMOS负载开关的总剂量测试","authors":"N. V. van Vonno, W. H. Newman","doi":"10.1109/REDW51883.2020.9325856","DOIUrl":null,"url":null,"abstract":"We report the results of total ionizing dose testing carried out by Renesas Electronics America on the ISL70061SEH (PMOS) and ISL70062SEH (NMOS) load switches. These parts are single channel, low voltage, high current load switches intended for use in space power switching applications. The tests were carried out as a part of baseline total dose hardness characterization carried out during part development. The test also performed biased high temperature anneals after the completion of irradiation at both dose rates to evaluate time dependent effects. Both parts are implemented in a 0.6 micron bulk BiCMOS process.","PeriodicalId":127384,"journal":{"name":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Total Dose Testing of the ISL70061SEH and ISL70062SEH PMOS and NMOS Load Switches\",\"authors\":\"N. V. van Vonno, W. H. Newman\",\"doi\":\"10.1109/REDW51883.2020.9325856\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the results of total ionizing dose testing carried out by Renesas Electronics America on the ISL70061SEH (PMOS) and ISL70062SEH (NMOS) load switches. These parts are single channel, low voltage, high current load switches intended for use in space power switching applications. The tests were carried out as a part of baseline total dose hardness characterization carried out during part development. The test also performed biased high temperature anneals after the completion of irradiation at both dose rates to evaluate time dependent effects. Both parts are implemented in a 0.6 micron bulk BiCMOS process.\",\"PeriodicalId\":127384,\"journal\":{\"name\":\"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW51883.2020.9325856\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW51883.2020.9325856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Total Dose Testing of the ISL70061SEH and ISL70062SEH PMOS and NMOS Load Switches
We report the results of total ionizing dose testing carried out by Renesas Electronics America on the ISL70061SEH (PMOS) and ISL70062SEH (NMOS) load switches. These parts are single channel, low voltage, high current load switches intended for use in space power switching applications. The tests were carried out as a part of baseline total dose hardness characterization carried out during part development. The test also performed biased high temperature anneals after the completion of irradiation at both dose rates to evaluate time dependent effects. Both parts are implemented in a 0.6 micron bulk BiCMOS process.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
