全局互连中随机过程变化的电路冲击和斜角分析

O. S. Nakagawa, N. Chang, S. Lin, D. Sylvester
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引用次数: 20

摘要

本文详细讨论了深亚微米逻辑芯片中随机互连工艺变化对全局互连电路性能的影响。首先利用有限差分场求解器和SPICE电路模拟器通过蒙特卡罗模拟计算了全局互连电路的信号延迟、上升时间和串扰变化。这些电路性能矩阵随后被表示为线宽、线厚和介电厚度的响应面函数(RSF)。然后通过从RSF获得的灵敏度和从生产线获得的标准偏差的乘积来测量电路冲击。此外,RSF和联合概率函数(JPF)相结合,有效地生成基于统计的3-/spl σ /过程角。与过于悲观的传统最坏情况偏角相比,这些工艺角显著提高了芯片设计中的电路性能界限。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Circuit impact and skew-corner analysis of stochastic process variation in global interconnect
This paper details the impact of the stochastic interconnect process variation on the circuit performance of global interconnects in deep-submicron logic chips. Signal delay, rise time, and crosstalk variations of global interconnect circuits were first calculated by Monte Carlo simulations using a finite-difference field solver and a SPICE circuit simulator. These circuit performance matrices were subsequently expressed as a response surface function (RSF) of line width, line thickness, and dielectric thickness. The circuit impact was then gauged by a product of sensitivity obtained from the RSF and standard deviation derived from the manufacturing line. Furthermore, the RSF and the joint probability function (JPF) were combined to efficiently generate statistics-based 3-/spl sigma/ process corners. These process corners significantly improved circuit performance bounds in chip design, as compared to the overly pessimistic, conventional worst-case skew-corners.
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