低功率和故障隔离:光子发射的光谱方面

I. Vagt, C. Boit
{"title":"低功率和故障隔离:光子发射的光谱方面","authors":"I. Vagt, C. Boit","doi":"10.1109/IPFA.2018.8452506","DOIUrl":null,"url":null,"abstract":"Photon emission (PE), for decades the most important technique for Contactless Fault Isolation (CFI) in microelectronics debug and failure analysis, has fallen short of recent IC technologies with respect to optical probing techniques like EOFM/EOP that seemed to be much more sensitive to lower supply voltage operation. This investigation explains why PE can remain a very useful complimentary CFI technique also in low voltage regime if efforts are taken for signal sensitivity on the infrared side of the emission spectrum. The experiments tell that even with InGaAs detectors, supply voltages down to almost 0.5V can be measured. With detectors of a spectral range towards even lower photon energies, PE will be sensitive to much smaller voltages. The gain of device information that PE can deliver, especially if evaluated spectrally, will be available to the advantage of FA and debug of FinFET technologies.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"13 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low Power and Fault Isolation: Spectral Aspects of Photon Emission\",\"authors\":\"I. Vagt, C. Boit\",\"doi\":\"10.1109/IPFA.2018.8452506\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photon emission (PE), for decades the most important technique for Contactless Fault Isolation (CFI) in microelectronics debug and failure analysis, has fallen short of recent IC technologies with respect to optical probing techniques like EOFM/EOP that seemed to be much more sensitive to lower supply voltage operation. This investigation explains why PE can remain a very useful complimentary CFI technique also in low voltage regime if efforts are taken for signal sensitivity on the infrared side of the emission spectrum. The experiments tell that even with InGaAs detectors, supply voltages down to almost 0.5V can be measured. With detectors of a spectral range towards even lower photon energies, PE will be sensitive to much smaller voltages. The gain of device information that PE can deliver, especially if evaluated spectrally, will be available to the advantage of FA and debug of FinFET technologies.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"13 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452506\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452506","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

几十年来,光子发射(PE)是微电子调试和故障分析中最重要的非接触式故障隔离(CFI)技术,但与EOFM/EOP等光学探测技术相比,最近的IC技术似乎对较低的供电电压操作更敏感。这项研究解释了为什么PE仍然是一个非常有用的补充CFI技术,也在低电压状态下,如果努力采取的信号灵敏度在发射光谱的红外侧。实验表明,即使使用InGaAs探测器,供电电压也可以低至0.5V。随着探测器的光谱范围接近更低的光子能量,PE将对更小的电压敏感。PE可以提供的器件信息的增益,特别是如果进行频谱评估,将有利于FA和FinFET技术的调试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low Power and Fault Isolation: Spectral Aspects of Photon Emission
Photon emission (PE), for decades the most important technique for Contactless Fault Isolation (CFI) in microelectronics debug and failure analysis, has fallen short of recent IC technologies with respect to optical probing techniques like EOFM/EOP that seemed to be much more sensitive to lower supply voltage operation. This investigation explains why PE can remain a very useful complimentary CFI technique also in low voltage regime if efforts are taken for signal sensitivity on the infrared side of the emission spectrum. The experiments tell that even with InGaAs detectors, supply voltages down to almost 0.5V can be measured. With detectors of a spectral range towards even lower photon energies, PE will be sensitive to much smaller voltages. The gain of device information that PE can deliver, especially if evaluated spectrally, will be available to the advantage of FA and debug of FinFET technologies.
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