MEMS中的超应力/静电放电(EOS/ESD)特性:保护策略大纲

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378067

B. Caillard, C. Pellet, A. Touboul, Y. Mita, H. Fujita

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引用次数: 0

摘要

本文对与MEMS结构特性相关的EOS/ESD问题进行了索引，并从EOS/ESD的角度回顾了MEMS故障和可靠性改进的一般工作，以及现有的保护方法。然后提出了一种新的保护方法，并对MEMS保护的一般方案提出了建议。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical OverStress/ElectroStatic Discharges (EOS/ESD) Specificities in MEMS: Outline of a Protection Strategy

In this paper, increased EOS/ESD concerns related to MEMS structural specificities are indexed and general works about failures and reliability improvement in MEMS are reviewed from an EOS/ESD point of view, as well as existing protection methods. Then a new method is proposed and recommandations for a general scheme for MEMS protection are suggested.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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