蚀刻后残留去除:采用致密流体清洗(DFC)的新型干法清洁技术

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247) Pub Date : 1999-05-26 DOI:10.1109/IITC.1999.787102

Dafna Beery, Karen Reinhardt, Patricia B. Smith, Janelle Kelley, Arunthati Sivasothy

{"title":"蚀刻后残留去除:采用致密流体清洗(DFC)的新型干法清洁技术","authors":"Dafna Beery, Karen Reinhardt, Patricia B. Smith, Janelle Kelley, Arunthati Sivasothy","doi":"10.1109/IITC.1999.787102","DOIUrl":null,"url":null,"abstract":"A novel dry cleaning technology has been developed by GaSonics, which was successfully applied to post etch residue removal. Densified fluid cleaning (DFC) is a dry source, liquid mode cleaning technology. It is based on application of densified gases at elevated pressures and low temperatures. When used together with microwave downstream plasma treatments, DFC enables the damage-free removal of heavy post etch residues containing Al, Ti or Cu, which are not readily affected by other wafer cleaning methods.","PeriodicalId":319568,"journal":{"name":"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)","volume":"199 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Post etch residue removal: novel dry clean technology using densified fluid cleaning (DFC)\",\"authors\":\"Dafna Beery, Karen Reinhardt, Patricia B. Smith, Janelle Kelley, Arunthati Sivasothy\",\"doi\":\"10.1109/IITC.1999.787102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel dry cleaning technology has been developed by GaSonics, which was successfully applied to post etch residue removal. Densified fluid cleaning (DFC) is a dry source, liquid mode cleaning technology. It is based on application of densified gases at elevated pressures and low temperatures. When used together with microwave downstream plasma treatments, DFC enables the damage-free removal of heavy post etch residues containing Al, Ti or Cu, which are not readily affected by other wafer cleaning methods.\",\"PeriodicalId\":319568,\"journal\":{\"name\":\"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)\",\"volume\":\"199 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.1999.787102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.1999.787102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

GaSonics开发了一种新型的干法清洗技术，并成功地应用于蚀刻后残留的去除。致密流体清洗(DFC)是一种干源、液态清洗技术。它是基于在高压和低温下应用致密气体。当与微波下游等离子体处理一起使用时，DFC可以无损伤地去除含有Al, Ti或Cu的重蚀刻残留物，这些残留物不易受到其他晶圆清洗方法的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Post etch residue removal: novel dry clean technology using densified fluid cleaning (DFC)

A novel dry cleaning technology has been developed by GaSonics, which was successfully applied to post etch residue removal. Densified fluid cleaning (DFC) is a dry source, liquid mode cleaning technology. It is based on application of densified gases at elevated pressures and low temperatures. When used together with microwave downstream plasma treatments, DFC enables the damage-free removal of heavy post etch residues containing Al, Ti or Cu, which are not readily affected by other wafer cleaning methods.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)

自引率

0.00%

发文量