半导体带隙分级缓冲层的性能优化薄太阳能电池

Prashant Kumar, B. S. Sengar, Amitesh Kumar
{"title":"半导体带隙分级缓冲层的性能优化薄太阳能电池","authors":"Prashant Kumar, B. S. Sengar, Amitesh Kumar","doi":"10.1109/icee50728.2020.9776971","DOIUrl":null,"url":null,"abstract":"Due to the low throughput and high-cost of Si-based Photovoltaic (PV) cells, alternatives such as thin-film PV cells based on Cu2ZnSnS4 (CZTS) and Cu2Sn1-xGexS3 (CTGS) are being sought. The buffer layer is very critical as it provides band-alignment at the absorber/window layer and also reduces defects/interfacial strain. The standard buffer layer of CdS for CIGS and CZTS has a bandgap around 2.7 eV, being detrimental for the performance of PV cells, necessitating alternative buffer layers of the higher bandgap. In this work, the role of bandgap variation has been analysed for performance optimization of CZTS based PV cells using SCAPS software. This study depicts that by bandgap grading through deploying alternative buffer materials, the performance of PV cells may be upgraded.","PeriodicalId":436884,"journal":{"name":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Semiconductor Bandgap grading of Buffer layer for performance optimization of thin solar cells\",\"authors\":\"Prashant Kumar, B. S. Sengar, Amitesh Kumar\",\"doi\":\"10.1109/icee50728.2020.9776971\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to the low throughput and high-cost of Si-based Photovoltaic (PV) cells, alternatives such as thin-film PV cells based on Cu2ZnSnS4 (CZTS) and Cu2Sn1-xGexS3 (CTGS) are being sought. The buffer layer is very critical as it provides band-alignment at the absorber/window layer and also reduces defects/interfacial strain. The standard buffer layer of CdS for CIGS and CZTS has a bandgap around 2.7 eV, being detrimental for the performance of PV cells, necessitating alternative buffer layers of the higher bandgap. In this work, the role of bandgap variation has been analysed for performance optimization of CZTS based PV cells using SCAPS software. This study depicts that by bandgap grading through deploying alternative buffer materials, the performance of PV cells may be upgraded.\",\"PeriodicalId\":436884,\"journal\":{\"name\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 5th IEEE International Conference on Emerging Electronics (ICEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icee50728.2020.9776971\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 5th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee50728.2020.9776971","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

由于硅基光伏(PV)电池的低通量和高成本,诸如基于Cu2ZnSnS4 (CZTS)和Cu2Sn1-xGexS3 (CTGS)的薄膜光伏电池的替代品正在寻求。缓冲层是非常关键的,因为它在吸收层/窗口层提供带对准,也减少缺陷/界面应变。用于CIGS和CZTS的cd的标准缓冲层具有约2.7 eV的带隙,这对PV电池的性能不利,因此需要更高带隙的替代缓冲层。在这项工作中,利用SCAPS软件分析了带隙变化对基于CZTS的光伏电池性能优化的作用。这项研究表明,通过部署替代缓冲材料来分级带隙,光伏电池的性能可能会得到提升。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Semiconductor Bandgap grading of Buffer layer for performance optimization of thin solar cells
Due to the low throughput and high-cost of Si-based Photovoltaic (PV) cells, alternatives such as thin-film PV cells based on Cu2ZnSnS4 (CZTS) and Cu2Sn1-xGexS3 (CTGS) are being sought. The buffer layer is very critical as it provides band-alignment at the absorber/window layer and also reduces defects/interfacial strain. The standard buffer layer of CdS for CIGS and CZTS has a bandgap around 2.7 eV, being detrimental for the performance of PV cells, necessitating alternative buffer layers of the higher bandgap. In this work, the role of bandgap variation has been analysed for performance optimization of CZTS based PV cells using SCAPS software. This study depicts that by bandgap grading through deploying alternative buffer materials, the performance of PV cells may be upgraded.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信