电磁辐射暴露对铜直接键合的影响

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947439

Jenn-Ming Song, Sin-Yong Liang, Po-Hao Chiang, Shang-Kun Huang, Y. Chiu, D. Tarng, C. Hung

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引用次数: 0

摘要

本研究首次提出了一种创新的预处理方法，通过暴露电磁辐射(包括闪光灯和近红外线)来增强cu - cu键合。短时间的电磁辐射暴露可以显著提高粘接强度。这可以归因于突然的加热/冷却和压缩残余应力，从而增强了铜原子的扩散和直接键合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of electromagnetic radiation exposure on direct Cu bonding

An innovative pre-treatment to enhance Cu-to-Cu bonding through the exposure of electromagnetic radiations including flash light and near infrared rays is first proposed in this study. Short period of electromagnetic radiation exposure can significantly improve the bonding strength. It can be ascribed to the sudden heating/cooling and thus compressive residual stresses which enhance the diffusion of copper atoms and direct bonding.

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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