T. Matsuoka, S. Kakimoto, T. Nakano, H. Kotaki, S. Hayashida, K. Sugimoto, K. Adachi, S. Morishita, K. Uda, Y. Sato, M. Yamanaka, T. Ogura, J. Takagi
{"title":"用于双栅cmosfet低压工作的直接隧道N/sub 2/O栅氮氧化物","authors":"T. Matsuoka, S. Kakimoto, T. Nakano, H. Kotaki, S. Hayashida, K. Sugimoto, K. Adachi, S. Morishita, K. Uda, Y. Sato, M. Yamanaka, T. Ogura, J. Takagi","doi":"10.1109/IEDM.1995.499350","DOIUrl":null,"url":null,"abstract":"Dual gate CMOSFETs with high performance were successfully realized by using 2.8 nm N/sub 2/O-oxynitrides as gate dielectrics. Unlike other fabrication procedures, /sup 11/B/sup +/ ions instead of /sup 49/BF/sub 2//sup +/ were implanted into the gate electrodes of PMOSFETs. We demonstrated that boron diffusion through the 2.8 nm-oxynitrides is effectively blocked by the use of RTA. Substrate current due to hot-carrier effects was observed for NMOSFETs with T/sub ox/=2.8 nm and L=0.5 /spl mu/m even below 1 V. Gate-oxide leakage of surface-channel PMOSFETs is lower than that of NMOSFETs because of high barrier height for holes which significantly reduces hole direct tunneling compared with electron direct tunneling.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Direct tunneling N/sub 2/O gate oxynitrides for low-voltage operation of dual gate CMOSFETs\",\"authors\":\"T. Matsuoka, S. Kakimoto, T. Nakano, H. Kotaki, S. Hayashida, K. Sugimoto, K. Adachi, S. Morishita, K. Uda, Y. Sato, M. Yamanaka, T. Ogura, J. Takagi\",\"doi\":\"10.1109/IEDM.1995.499350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dual gate CMOSFETs with high performance were successfully realized by using 2.8 nm N/sub 2/O-oxynitrides as gate dielectrics. Unlike other fabrication procedures, /sup 11/B/sup +/ ions instead of /sup 49/BF/sub 2//sup +/ were implanted into the gate electrodes of PMOSFETs. We demonstrated that boron diffusion through the 2.8 nm-oxynitrides is effectively blocked by the use of RTA. Substrate current due to hot-carrier effects was observed for NMOSFETs with T/sub ox/=2.8 nm and L=0.5 /spl mu/m even below 1 V. Gate-oxide leakage of surface-channel PMOSFETs is lower than that of NMOSFETs because of high barrier height for holes which significantly reduces hole direct tunneling compared with electron direct tunneling.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Direct tunneling N/sub 2/O gate oxynitrides for low-voltage operation of dual gate CMOSFETs
Dual gate CMOSFETs with high performance were successfully realized by using 2.8 nm N/sub 2/O-oxynitrides as gate dielectrics. Unlike other fabrication procedures, /sup 11/B/sup +/ ions instead of /sup 49/BF/sub 2//sup +/ were implanted into the gate electrodes of PMOSFETs. We demonstrated that boron diffusion through the 2.8 nm-oxynitrides is effectively blocked by the use of RTA. Substrate current due to hot-carrier effects was observed for NMOSFETs with T/sub ox/=2.8 nm and L=0.5 /spl mu/m even below 1 V. Gate-oxide leakage of surface-channel PMOSFETs is lower than that of NMOSFETs because of high barrier height for holes which significantly reduces hole direct tunneling compared with electron direct tunneling.
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