FinFET技术布局依赖效应的紧凑建模解决方案

Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI:10.1109/ICMTS.2015.7106119

David Chen, G. Lin, Tien Hua Lee, Ryan Lee, Y. C. Liu, Meng Fan Wang, Yi Ching Cheng, D. Y. Wu

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引用次数: 11

摘要

我们成功地开发并验证了FinFET技术的布局依赖效应(LDE)的完整紧凑模型解决方案。LDE对器件性能的显著影响主要是由于应力源的应用和器件的侵略性缩放。使用LDE，性能下降可能高达10%或更多。在这项工作中，提供了氧化长度(LOD)，井邻近效应(WPE)，邻近扩散效应(NDE)，金属边界效应(MBE)和门线末端效应(GLE)的紧凑模型解。该方案已在BSIM-CMG中成功实现，实现了高效的电路仿真。

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Compact modeling solution of layout dependent effect for FinFET technology

We successfully developed and verified a complete compact model solution for layout dependent effect (LDE) of FinFET technology. LDE has significant impact on the device performances mainly due to the application of stressors and aggressive device scaling. With LDE, performance degradation may be up to 10% or more. In this work, compact model solution for Length of Oxidation (LOD), Well Proximity Effect (WPE), Neighboring Diffusion Effect (NDE), Metal Boundary Effect (MBE), and Gate Line End Effect (GLE) were delivered. This solution was implemented successfully in BSIM-CMG for efficient circuit simulation.

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Proceedings of the 2015 International Conference on Microelectronic Test Structures

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