SiGe:C异质结双极晶体管光子发射光谱分辨率研究

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI:10.1109/IRPS.2011.5784527

U. Kindereit, Oana-Mihaela Mutihac, C. Boit, B. Tillack

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引用次数: 3

摘要

该出版物介绍了Si-CCD和InGaAs探测器获得的SiGe: c - hbt的光子发射测量，证明了InGaAs相机在该应用中的能力。发射特性有助于区分工作模式，如饱和，主动或雪崩。光谱响应在1300 nm处显示局部最大值，表示由于添加了锗而减小了带隙。

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Spectral resolution of photon emission from SiGe:C heterojunction bipolar transistors (HBTs)

This publication presents photon emission measurements of SiGe:C-HBTs acquired with Si-CCD and InGaAs detector, proving the InGaAs-camera capability for this application. The emission characteristic helps distinguish operating modes like saturation, active or avalanche. Spectral response shows a local maximum at 1300 nm, representing the decreased bandgap due to additional germanium.

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2011 International Reliability Physics Symposium

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