实验验证了基于氮化铝的压力、温度和3轴加速度传感器集成在单个芯片上

2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS) Pub Date : 2014-03-13 DOI:10.1109/MEMSYS.2014.6765744

F. Goericke, K. Mansukhani, Kansho Yamamoto, A. Pisano

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引用次数: 5

摘要

本文报道了在单芯片上构建多个基于氮化铝(AlN)的微机电系统(MEMS)传感器的统一制造工艺。一个全功能的基于aln的传感器集群已经被证明，并在本文中提出。该传感器集群是一个“五自由度”集群;它测量3轴加速度，温度和压力制造在1厘米× 1厘米的模具上。除了利用AlN作为传感器的结构层和有源层之外，这项工作是新颖的，因为所有传感器都是在同一制造运行中制造的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Experimentally validated aluminum nitride based pressure, temperature and 3-axis acceleration sensors integrated on a single chip

This paper reports a unified fabrication process used to build multiple Aluminum Nitride (AlN) based micro-electromechanical system (MEMS) sensors on a single chip. A fully functional AlN-based sensor cluster has been demonstrated and is presented in this paper. This sensor cluster is a “five degree-of-freedom” cluster; it measures 3-axis acceleration, temperature and pressure fabricated on a 1 cm × 1 cm die. In addition to utilizing AlN as both the structural and active layer of the sensors, this work is novel because all sensors are fabricated in the same fabrication run.

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来源期刊

2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)

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