金刚石引脚用作热通孔，用于半导体封装的cte兼容盖和基板中的高热通量传播

Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI:10.1109/STHERM.2006.1625223

D. Saums, B. Edward, P. Ruzicka, K. Fennessy, R. Hay, J. Zimmer, G. Sundberg

{"title":"金刚石引脚用作热通孔，用于半导体封装的cte兼容盖和基板中的高热通量传播","authors":"D. Saums, B. Edward, P. Ruzicka, K. Fennessy, R. Hay, J. Zimmer, G. Sundberg","doi":"10.1109/STHERM.2006.1625223","DOIUrl":null,"url":null,"abstract":"CVD diamond segments inserted into an extremely high thermal conductivity graphite heat spreader within an expansion-matched composite structure are described as a semiconductor packaging material construction. These development materials are evaluated to address high heat flux spreading requirements of on-die hot spots and the need to match differing coefficients of thermal expansion with other packaging components and semiconductor die materials","PeriodicalId":222515,"journal":{"name":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Diamond pins utilized as thermal vias for high heat flux spreading in CTE-compatible lids and substrates for semiconductor packaging\",\"authors\":\"D. Saums, B. Edward, P. Ruzicka, K. Fennessy, R. Hay, J. Zimmer, G. Sundberg\",\"doi\":\"10.1109/STHERM.2006.1625223\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CVD diamond segments inserted into an extremely high thermal conductivity graphite heat spreader within an expansion-matched composite structure are described as a semiconductor packaging material construction. These development materials are evaluated to address high heat flux spreading requirements of on-die hot spots and the need to match differing coefficients of thermal expansion with other packaging components and semiconductor die materials\",\"PeriodicalId\":222515,\"journal\":{\"name\":\"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STHERM.2006.1625223\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.2006.1625223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

CVD金刚石段插入到膨胀匹配复合结构内的极高导热石墨散热器中，被描述为半导体封装材料结构。对这些开发材料进行评估，以满足芯片上热点的高热流传播要求，并需要与其他封装组件和半导体芯片材料匹配不同的热膨胀系数

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Diamond pins utilized as thermal vias for high heat flux spreading in CTE-compatible lids and substrates for semiconductor packaging

CVD diamond segments inserted into an extremely high thermal conductivity graphite heat spreader within an expansion-matched composite structure are described as a semiconductor packaging material construction. These development materials are evaluated to address high heat flux spreading requirements of on-die hot spots and the need to match differing coefficients of thermal expansion with other packaging components and semiconductor die materials

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium

自引率

0.00%

发文量