P. Rinaudo, A. Chasin, J. Franco, Z. Wu, N. Rassoul, R. Delhougne, B. Kaczer, I. Wolf, G. Kar
{"title":"IGZO tft的退化映射","authors":"P. Rinaudo, A. Chasin, J. Franco, Z. Wu, N. Rassoul, R. Delhougne, B. Kaczer, I. Wolf, G. Kar","doi":"10.1109/IIRW56459.2022.10032766","DOIUrl":null,"url":null,"abstract":"We studied the impact of gate and drain stress biases combination on IGZO based TFTs degradation targeting hot carrier regime. We show that typical signatures of this mechanism (e.g., saturation current degradation and SS increase) are not visible even at high drain biases, while a gate bias dependence only (BTI) is present in most of the degradation data.","PeriodicalId":446436,"journal":{"name":"2022 IEEE International Integrated Reliability Workshop (IIRW)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Degradation mapping of IGZO TFTs\",\"authors\":\"P. Rinaudo, A. Chasin, J. Franco, Z. Wu, N. Rassoul, R. Delhougne, B. Kaczer, I. Wolf, G. Kar\",\"doi\":\"10.1109/IIRW56459.2022.10032766\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We studied the impact of gate and drain stress biases combination on IGZO based TFTs degradation targeting hot carrier regime. We show that typical signatures of this mechanism (e.g., saturation current degradation and SS increase) are not visible even at high drain biases, while a gate bias dependence only (BTI) is present in most of the degradation data.\",\"PeriodicalId\":446436,\"journal\":{\"name\":\"2022 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW56459.2022.10032766\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW56459.2022.10032766","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We studied the impact of gate and drain stress biases combination on IGZO based TFTs degradation targeting hot carrier regime. We show that typical signatures of this mechanism (e.g., saturation current degradation and SS increase) are not visible even at high drain biases, while a gate bias dependence only (BTI) is present in most of the degradation data.
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