八角形MOSFET:低功耗模拟应用的可靠器件

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044176

Y. Joly, L. Lopez, J. Portal, H. Aziza, P. Masson, J. Ogier, Y. Bert, F. Julien, P. Fornara

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引用次数: 5

摘要

低功率模拟电路需要在亚阈值区域偏置的大而短的mosfet，并且具有良好的匹配性能。为了达到这些规格，提出了八角形晶体管。由于它们的设计，这些晶体管避免了驼峰效应。因此，门限下匹配的栅源电压始终处于最佳水平。此外，本文还证明了八边形NMOS提高了器件对热载流子应力的鲁棒性;由于热载流子应力引起的VT匹配退化也通过八角形设计得到改善。

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Octagonal MOSFET: Reliable device for low power analog applications

Low power analog circuits needs large and short MOSFETs biased in the sub-threshold area with good performances in terms of matching. In order to reach these specifications, octagonal transistors are proposed. Due to their design, these transistors avoid hump effect. As a consequence, gate-source voltage matching under-threshold is always at its best level. Moreover, the paper shows the device robustness to hot carrier stress is improved on octagonal NMOS; VT matching degradation due to hot carrier stress is also improved with an octagonal design.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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