使用y参数预测大信号CML门延迟,用于快速过程优化

S. Shankar, W. van Noort, J. Cressler
{"title":"使用y参数预测大信号CML门延迟,用于快速过程优化","authors":"S. Shankar, W. van Noort, J. Cressler","doi":"10.1109/BCTM.2013.6798177","DOIUrl":null,"url":null,"abstract":"A Y-Parameter based Figure-of-Merit (FoM) is proposed that can accurately predict large-signal Current-Mode Logic (CML) gate delay from small-signal S-parameter simulations/measurements. A differential-mode (DM) half circuit of an emitter-coupled differential pair with resistive load is used as the small-signal building block. The FoM is applied to various collector current (IC) and load resistor (RL) combinations obtained from the power-delay curve of a prototype SiGe technology platform. Results of the FoM delay predictions are compared with ring oscillator gate delays. A small-signal model parameter based equation is also proposed that provides physical insight into the components that contribute to the overall CML delay.","PeriodicalId":272941,"journal":{"name":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Predicting large-signal CML gate delay using Y-Parameters for fast process optimization\",\"authors\":\"S. Shankar, W. van Noort, J. Cressler\",\"doi\":\"10.1109/BCTM.2013.6798177\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Y-Parameter based Figure-of-Merit (FoM) is proposed that can accurately predict large-signal Current-Mode Logic (CML) gate delay from small-signal S-parameter simulations/measurements. A differential-mode (DM) half circuit of an emitter-coupled differential pair with resistive load is used as the small-signal building block. The FoM is applied to various collector current (IC) and load resistor (RL) combinations obtained from the power-delay curve of a prototype SiGe technology platform. Results of the FoM delay predictions are compared with ring oscillator gate delays. A small-signal model parameter based equation is also proposed that provides physical insight into the components that contribute to the overall CML delay.\",\"PeriodicalId\":272941,\"journal\":{\"name\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2013.6798177\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2013.6798177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了一种基于y参数的性能图(FoM),可以从小信号s参数仿真/测量中准确预测大信号电流模式逻辑(CML)门延迟。采用带阻性负载的发射器耦合差分对的差模(DM)半电路作为小信号模块。该FoM应用于从SiGe技术平台原型的功率延迟曲线中获得的各种集电极电流(IC)和负载电阻(RL)组合。将FoM延迟预测结果与环形振荡器门延迟进行了比较。还提出了一个基于小信号模型参数的方程,该方程提供了对导致整体CML延迟的组件的物理洞察。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Predicting large-signal CML gate delay using Y-Parameters for fast process optimization
A Y-Parameter based Figure-of-Merit (FoM) is proposed that can accurately predict large-signal Current-Mode Logic (CML) gate delay from small-signal S-parameter simulations/measurements. A differential-mode (DM) half circuit of an emitter-coupled differential pair with resistive load is used as the small-signal building block. The FoM is applied to various collector current (IC) and load resistor (RL) combinations obtained from the power-delay curve of a prototype SiGe technology platform. Results of the FoM delay predictions are compared with ring oscillator gate delays. A small-signal model parameter based equation is also proposed that provides physical insight into the components that contribute to the overall CML delay.
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