热电子诱导MOS动态ram的保留时间退化

24th International Reliability Physics Symposium Pub Date : 1986-04-01 DOI:10.1109/IRPS.1986.362133

E. Cahoon, K. Thornewell, P. Tsai, T. Gukelberger, J. Sylvestri, J. Orro

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引用次数: 3

摘要

热电子诱导的MOSFET不稳定性显著降低了动态ram的保持时间。故障是由于阈下泄漏增加对平衡感节点的影响。等离子体氮化钝化大大提高了降解率。器件退化与DRAM参数移位之间的复杂协同作用证明了功能模块加速应力的必要性。

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Hot Electron Induced Retention Time Degradation in MOS Dynamic RAMs

Hot electron induced MOSFET instabilities have been found to significantly degrade the retention time of dynamic RAMs. Failure is due to the effect of increased subthreshold leakage on balanced sense nodes. Plasma nitride passivations greatly increase the degradation rate. The complex synergism between device degradation and DRAM parametric shift demonstrates the necessity of accelerated stress of functional modules.

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24th International Reliability Physics Symposium

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