{"title":"铜/低钾封装用绿色成型化合物的比较研究","authors":"S. Chungpaiboonpatana, F. Shi, M. Todd, L. Crane","doi":"10.1109/ISAPM.2005.1432091","DOIUrl":null,"url":null,"abstract":"The experimental results are reported on the 80 leads ETQFP module-level understanding of the performance between two green molding compound types in the packaging of 90nm Cu/low-k Si devices using Cu/Ag leadframe. The stress-induced Cu/Ag leadframe-finish migration is observed for a P-contained molding compound, while a new hydrophobic nitrogen-based flame retardant molding compound does not lead to any electromigration failure. Based on the extensive electrochemical and failure analyses, the failure mechanism is elucidated: it is found that Cu/Ag lead-finish migration is induced by the stressed formation of phosphoric acids during extended biased and specific temperature/moisture stressing. Its dendritic extension reflects a non-coplanar pattern and a cathodic-anodic electrochemical cell characteristic through the epoxy matrix. A migration model was proposed to prevent similar failure recurrences in future materials introduced to the industry.","PeriodicalId":181674,"journal":{"name":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Comparative studies of green molding compounds for the encapsulation of Cu/low-k packages\",\"authors\":\"S. Chungpaiboonpatana, F. Shi, M. Todd, L. Crane\",\"doi\":\"10.1109/ISAPM.2005.1432091\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The experimental results are reported on the 80 leads ETQFP module-level understanding of the performance between two green molding compound types in the packaging of 90nm Cu/low-k Si devices using Cu/Ag leadframe. The stress-induced Cu/Ag leadframe-finish migration is observed for a P-contained molding compound, while a new hydrophobic nitrogen-based flame retardant molding compound does not lead to any electromigration failure. Based on the extensive electrochemical and failure analyses, the failure mechanism is elucidated: it is found that Cu/Ag lead-finish migration is induced by the stressed formation of phosphoric acids during extended biased and specific temperature/moisture stressing. Its dendritic extension reflects a non-coplanar pattern and a cathodic-anodic electrochemical cell characteristic through the epoxy matrix. A migration model was proposed to prevent similar failure recurrences in future materials introduced to the industry.\",\"PeriodicalId\":181674,\"journal\":{\"name\":\"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-03-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAPM.2005.1432091\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Symposium on Advanced Packaging Materials: Processes, Properties and Interfaces, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAPM.2005.1432091","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparative studies of green molding compounds for the encapsulation of Cu/low-k packages
The experimental results are reported on the 80 leads ETQFP module-level understanding of the performance between two green molding compound types in the packaging of 90nm Cu/low-k Si devices using Cu/Ag leadframe. The stress-induced Cu/Ag leadframe-finish migration is observed for a P-contained molding compound, while a new hydrophobic nitrogen-based flame retardant molding compound does not lead to any electromigration failure. Based on the extensive electrochemical and failure analyses, the failure mechanism is elucidated: it is found that Cu/Ag lead-finish migration is induced by the stressed formation of phosphoric acids during extended biased and specific temperature/moisture stressing. Its dendritic extension reflects a non-coplanar pattern and a cathodic-anodic electrochemical cell characteristic through the epoxy matrix. A migration model was proposed to prevent similar failure recurrences in future materials introduced to the industry.