N. Tanaka, Y. Yoshimura, T. Naito, C. Miyazaki, T. Uematsu, K. Hanada, N. Toma, T. Akazawa
{"title":"使用室温键合的3D-SiP低成本通孔电极互连","authors":"N. Tanaka, Y. Yoshimura, T. Naito, C. Miyazaki, T. Uematsu, K. Hanada, N. Toma, T. Akazawa","doi":"10.1109/ECTC.2006.1645751","DOIUrl":null,"url":null,"abstract":"To verify the operation of three-dimensional SiP with through-hole electrode interconnections, we manufactured a prototype of a 3D-SiP sample composed of a MCU, an interposer, and a synchronous DRAM (SDRAM) chip using a proposed mechanical caulking operation. A new electrode design of LSI for through-hole electrode interconnection is important for establishing a stable mass-production process. By using this technology, the package thickness can be 1.0 mm or less even in ten-chip layers, compared with two-chip layers using wire bonding, which are approximately 1.25-mm thick","PeriodicalId":194969,"journal":{"name":"56th Electronic Components and Technology Conference 2006","volume":"170 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Low-cost through-hole electrode interconnection for 3D-SiP using room-temperature bonding\",\"authors\":\"N. Tanaka, Y. Yoshimura, T. Naito, C. Miyazaki, T. Uematsu, K. Hanada, N. Toma, T. Akazawa\",\"doi\":\"10.1109/ECTC.2006.1645751\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To verify the operation of three-dimensional SiP with through-hole electrode interconnections, we manufactured a prototype of a 3D-SiP sample composed of a MCU, an interposer, and a synchronous DRAM (SDRAM) chip using a proposed mechanical caulking operation. A new electrode design of LSI for through-hole electrode interconnection is important for establishing a stable mass-production process. By using this technology, the package thickness can be 1.0 mm or less even in ten-chip layers, compared with two-chip layers using wire bonding, which are approximately 1.25-mm thick\",\"PeriodicalId\":194969,\"journal\":{\"name\":\"56th Electronic Components and Technology Conference 2006\",\"volume\":\"170 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"56th Electronic Components and Technology Conference 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2006.1645751\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"56th Electronic Components and Technology Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2006.1645751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
摘要
为了验证具有通孔电极互连的三维SiP的操作，我们制造了一个3D-SiP样品的原型，该样品由MCU，中间层和同步DRAM (SDRAM)芯片组成，使用提议的机械嵌缝操作。一种新型的通孔电极互连电极设计对于建立稳定的量产工艺具有重要意义。通过使用这种技术，即使在十芯片层中，封装厚度也可以达到1.0 mm或更小，而使用线键合的两芯片层厚度约为1.25 mm
Low-cost through-hole electrode interconnection for 3D-SiP using room-temperature bonding
To verify the operation of three-dimensional SiP with through-hole electrode interconnections, we manufactured a prototype of a 3D-SiP sample composed of a MCU, an interposer, and a synchronous DRAM (SDRAM) chip using a proposed mechanical caulking operation. A new electrode design of LSI for through-hole electrode interconnection is important for establishing a stable mass-production process. By using this technology, the package thickness can be 1.0 mm or less even in ten-chip layers, compared with two-chip layers using wire bonding, which are approximately 1.25-mm thick
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