Silicon-on-diamond MOS-transistors with thermally grown gate oxide

Summary form only given. Self-heating in Silicon-On-Insulator (SOI) devices has during the past years attracted lots of attention and is a problem that remains to be solved. It has, furthermore, been shown that in smart power devices, thick buried oxides of 3 /spl mu/m or more are desired to prevent the substrate potential to lower breakdown voltages. However, these thicker buried oxides will only aggravate the thermal limitations imposed by the buried oxide. Due to the outstanding thermal properties of diamond compared to silicon dioxide, it would consequently be advantageous if silicon dioxide could be replaced with diamond in future SOI materials. Even though it has been shown that diamond is compatible with conventional silicon processing, no MOS-transistors with thermally grown gate oxide has been manufactured up to date, due to the difficulty in protecting diamond during furnace oxidations. In this paper Silicon-On-Diamond (S-O-D) MOS-transistors with thermally grown gate oxide are presented for the first time.