互补SiGe:C BiCMOS技术中HBT老化的比较研究

2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Pub Date : 2013-09-01 DOI:10.1109/BCTM.2013.6798167

G. Fischer, J. Molina, B. Tillack

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引用次数: 6

摘要

在混合模式和反向应力条件下，对互补BiCMOS技术的npn-和pnp-SiGe HBT类型进行了持续研究，以检查是否存在老化不匹配。这些在正向压力下比反向压力下更为明显。长期压力测试显示，在低电流压力条件下，尚未描述的基电流退化“迎头赶上”。所得的老化参数被放入一个老化函数中，以纳入HBT紧凑模型。

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Comparative study of HBT ageing in a complementary SiGe:C BiCMOS technology

Both npn- and pnp-SiGe HBT types of a complementary BiCMOS technology were consistently studied under mixed-mode and reverse stress conditions to check for any ageing mismatches. These were found to be more pronounced under forward than under reverse stress. Long-term stress-tests revealed a not yet described base current degradation “catching-up” under low current stress conditions. The resulting ageing parameters were put together into an ageing function for incorporation into HBT compact models.

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2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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