SOI mosfet的混合模式工作分析

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344541

M. Matloubian

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引用次数: 8

摘要

本文采用标准MOS I-V方程，模拟了n沟道SOI mosfet在MOS和混合工作模式下的特性。结果表明，阈值区域漏极电流的增强仅仅是由于施加的正体偏置降低了MOS阈值电压。只有当体电压高于2/spl phi//sub P/时，BJT对漏极电流的贡献才会变得显著

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Analysis of hybrid-mode operation of SOI MOSFETs

In this paper, the characteristics of n-channel SOI MOSFETs in MOS and hybrid-modes of operation are simulated using standard MOS I-V equations. It is shown that the enhancement in drain current in the threshold region is only due to the reduction of the MOS threshold voltage by the applied positive body bias. Only for body voltages higher than 2/spl phi//sub P/ does the BJT contribution to the drain current become significant.<>

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Proceedings of 1993 IEEE International SOI Conference

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