{"title":"双极晶体管横向缩放的预测模型","authors":"D. Walkey, M. Schroter, S. Voinigescu","doi":"10.1109/BIPOL.1995.493870","DOIUrl":null,"url":null,"abstract":"A new approach for modelling the dependence of bipolar transistor characteristics on emitter width and length is presented. The new model, verified by device simulation and measurement, predicts device behavior accurately over a wide range of emitter aspect ratios.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Predictive modelling of lateral scaling in bipolar transistors\",\"authors\":\"D. Walkey, M. Schroter, S. Voinigescu\",\"doi\":\"10.1109/BIPOL.1995.493870\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new approach for modelling the dependence of bipolar transistor characteristics on emitter width and length is presented. The new model, verified by device simulation and measurement, predicts device behavior accurately over a wide range of emitter aspect ratios.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493870\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493870","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Predictive modelling of lateral scaling in bipolar transistors
A new approach for modelling the dependence of bipolar transistor characteristics on emitter width and length is presented. The new model, verified by device simulation and measurement, predicts device behavior accurately over a wide range of emitter aspect ratios.
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