累加型悬栅MOSFET的分析建模及超低工作功率器件的工艺挑战

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159315

M. Collonge, M. Vinet, M. Ribeiro, J. Pedini, B. Previtali, T. Ernst, S. Bécu, G. Ghibaudo

{"title":"累加型悬栅MOSFET的分析建模及超低工作功率器件的工艺挑战","authors":"M. Collonge, M. Vinet, M. Ribeiro, J. Pedini, B. Previtali, T. Ernst, S. Bécu, G. Ghibaudo","doi":"10.1109/VTSA.2009.5159315","DOIUrl":null,"url":null,"abstract":"For the first time, an analytical model of an Accumulation-Mode Suspended-Gate MOSFET is proposed. For very low power operation, adhesion energies of gate and gate oxide as low as 130µJ/m2 are required as well as sub-2.3N/m doubly clamped gate. Experimentally a 0.2N/m suspended silicon nanowire was processed, opening perspectives for device downscaling.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":"191 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analytical modeling of Accumulation-Mode Suspended-Gate MOSFET and process challenges for very low operating power devices\",\"authors\":\"M. Collonge, M. Vinet, M. Ribeiro, J. Pedini, B. Previtali, T. Ernst, S. Bécu, G. Ghibaudo\",\"doi\":\"10.1109/VTSA.2009.5159315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, an analytical model of an Accumulation-Mode Suspended-Gate MOSFET is proposed. For very low power operation, adhesion energies of gate and gate oxide as low as 130µJ/m2 are required as well as sub-2.3N/m doubly clamped gate. Experimentally a 0.2N/m suspended silicon nanowire was processed, opening perspectives for device downscaling.\",\"PeriodicalId\":309622,\"journal\":{\"name\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"volume\":\"191 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2009.5159315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

首次提出了累加型悬栅MOSFET的解析模型。对于非常低的功率工作，栅极和栅极氧化物的粘附能需要低至130µJ/m2，以及低于2.3 n /m的双夹紧栅极。实验处理了0.2N/m的悬浮硅纳米线，为器件的缩小尺寸开辟了前景。

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Analytical modeling of Accumulation-Mode Suspended-Gate MOSFET and process challenges for very low operating power devices

For the first time, an analytical model of an Accumulation-Mode Suspended-Gate MOSFET is proposed. For very low power operation, adhesion energies of gate and gate oxide as low as 130µJ/m2 are required as well as sub-2.3N/m doubly clamped gate. Experimentally a 0.2N/m suspended silicon nanowire was processed, opening perspectives for device downscaling.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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