400°C PureB在Si上沉积过程监控的薄片电阻测量

Proceedings of the 2015 International Conference on Microelectronic Test Structures Pub Date : 2015-03-23 DOI:10.1109/ICMTS.2015.7106135

L. Qi, L. Nanver

{"title":"400°C PureB在Si上沉积过程监控的薄片电阻测量","authors":"L. Qi, L. Nanver","doi":"10.1109/ICMTS.2015.7106135","DOIUrl":null,"url":null,"abstract":"Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.","PeriodicalId":177627,"journal":{"name":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Sheet resistance measurement for process monitoring of 400 °C PureB deposition on Si\",\"authors\":\"L. Qi, L. Nanver\",\"doi\":\"10.1109/ICMTS.2015.7106135\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.\",\"PeriodicalId\":177627,\"journal\":{\"name\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"volume\":\"143 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2015 International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2015.7106135\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2015.7106135","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

提出了测定400℃纯硼(PureB)沉积在硅上形成的界面电导的片电阻测试结构。该结构易于制造和测量，可在沉积后直接进行监测或在生产线末端进行监测。这为PureB(光电)二极管的沉积和串联电阻的完善提供了有价值的信息。

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Sheet resistance measurement for process monitoring of 400 °C PureB deposition on Si

Sheet-resistance test-structures to determine conductance along the interface formed by 400°C pure boron (PureB) deposition on silicon are presented. The structures are straightforward to fabricate and measure for monitoring either directly after deposition or end-of-line. This provides valuable information on the perfection of the deposition and the series resistance of PureB (photo)diodes.

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Proceedings of the 2015 International Conference on Microelectronic Test Structures

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