用于BiCMOS应用的电压可扩展GHz接口电路

H. Chang, K. Fung, M. Izzard, D. Scott
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引用次数: 0

摘要

随着技术的发展,集成电路的工作电压会下降,一块主板上的芯片可能会在不同的电源上工作。在这种情况下,高速接口电路不仅需要与3.3 V电源兼容,而且还需要与未来芯片的I/O水平兼容,这些芯片可以在更低的电压下工作。本文研究了在数据速率高于2.5 Gbit/s的通信设计中的基本构建模块。我们的实验结果表明,BiCMOS作为一种技术可以用于实现工作在2.5 V及以下的电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Voltage scalable GHz interface circuits for BiCMOS applications
As technology scales, the operating voltage of IC's will drop and chips on a common board may operate at different power supplies. In such a scenario, it becomes necessary for the high speed interface circuits to be not only compatible with a 3.3 V supply, but also with I/O levels of future chips that operate at even lower voltage supplies. This paper examines basic building blocks in communication designs operating at data rates above 2.5 Gbit/s. Our experimental results show that BiCMOS as a technology can be used to implement circuits operating at 2.5 V and below.
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