新型铌衬里铝回流低阻双腐蚀工艺

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) Pub Date : 1998-06-09 DOI:10.1109/VLSIT.1998.689194

J. Wada, Y. Oikawa, T. Katata, N. Nakamura, M. B. Anand

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引用次数: 9

摘要

只提供摘要形式。本文介绍了采用铌衬里铝回流新工艺制备的优异的铝填充特性和低电阻双大马士革互连。这种新工艺可以填充AR4的过孔，与现有的RIE-Al线和Ti衬里的回流铝线相比，电阻下降40-50%。这些性能归因于Nb和Al之间的反应速度较慢。使用该工艺在200毫米晶圆上验证了优异的通电性能。这种新工艺是0.25-0.15 um以下铝金属化的主要候选工艺。

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Low resistance dual damascene process by new Al reflow using Nb liner

Summary form only given. This paper describes excellent Al filling characteristics and low resistance dual damascene interconnects obtained with a new Al reflow process using Nb liner. This novel process can fill vias of AR4 and can achieve 40-50% drop in resistance compared with current RIE-Al lines and reflow-Al lines with Ti liner. These properties are attributed to a slower reaction rate between Nb and Al. Excellent via electrical properties have been verified across 200 mm wafers using this process. This new process is a leading candidate for sub-0.25-0.15 um Al metallization.

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来源期刊

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)

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