单晶PZT薄膜器件的特性

Proceedings of International Electron Devices Meeting Pub Date : 1995-12-10 DOI:10.1109/IEDM.1995.497198

J. Joo, S. Joo

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引用次数: 0

摘要

发现在PZT (PbZr/sub x/Ti/sub 1-x/O/sub 3/)中加入钽后，溅射沉积的PZT薄膜的晶粒尺寸明显增大，通过SRCC (Selective Radiation Controlled Crystallization)工艺可以得到异常大的单晶粒。对单晶PZT薄膜的电学测试结果表明，多晶PZT薄膜的漏电流大、击穿场小、疲劳和老化等电流问题可以得到很好的解决。单晶PZT薄膜具有低漏电流(J/sub LC//spl sim/1/spl times/10/sup -8/ A/cm/sup 2/)和优异的极化性能(Q/sub c//spl sim/35 /spl mu/ c/ cm/sup 2/， Pr/spl sim/15 /spl mu/ c/ cm/sup 2/)。

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Characteristics of the PZT thin film device fabricated on the single grain

It was found that when tantalum was added to PZT (PbZr/sub x/Ti/sub 1-x/O/sub 3/), the grain size of the sputter-deposited PZT films could be significantly enlarged so that abnormally large single grains could be obtained through so called SRCC (Selective Radiation Controlled Crystallization) process. Electrical measurements of the single grained PZT thin films strongly indicated that the current problems with the polycrystalline PZT thin films such as high leakage current, low breakdown field, fatigue and aging can be solved. The single grained PZT films showed low leakage current (J/sub LC//spl sim/1/spl times/10/sup -8/ A/cm/sup 2/) and excellent polarization properties (Q/sub c//spl sim/35 /spl mu/C/cm/sup 2/, Pr/spl sim/15 /spl mu/C/cm/sup 2/).

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Proceedings of International Electron Devices Meeting

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