采用倒置高压井SOI技术设计的新型200V大电流、高可靠性电源器件

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694442

Siyang Liu, Weifeng Sun, Tingting Huang, Chunwei Zhang

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引用次数: 10

摘要

采用特殊的0.5μm倒高压阱SOI技术，制备了n型横向绝缘子栅双极晶体管(nlight)、n型横向扩展漏极MOS (nLEDMOS)和p型横向扩展漏极MOS (pLEDMOS)等新型200V电源器件。与传统器件相比，新型器件具有更大的电流密度、更高的脱态击穿电压(BV)和更好的热载子可靠性。改进后的器件已成功应用于等离子显示面板(PDP)扫描驱动IC中，芯片尺寸减小了27%。

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Novel 200V power devices with large current capability and high reliability by inverted HV-well SOI technology

Novel 200V power devices, including the n-type lateral insulator gate bipolar transistor (nLIGBT), the n-type lateral extended drain MOS (nLEDMOS) and the p-type lateral extended drain MOS (pLEDMOS), have been fabricated by using the special 0.5μm inverted HV-well SOI technology. All the novel devices own larger current density, higher off-state breakdown voltage (BV) and better hot-carrier reliability comparing with the conventional devices. The improved devices have been successfully used for the plasma display panel (PDP) scan driver IC and reduce the chip size by 27%.

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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