无边界氮化物电导率增加引发接触蚀刻过程中的充电损伤

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI:10.1109/PPID.2003.1199721

A. Cacciaot, A. Scarpa, S. Evseev, M. Diekema

{"title":"无边界氮化物电导率增加引发接触蚀刻过程中的充电损伤","authors":"A. Cacciaot, A. Scarpa, S. Evseev, M. Diekema","doi":"10.1109/PPID.2003.1199721","DOIUrl":null,"url":null,"abstract":"In this paper we evaluate the effect of nitride conduction on charging damage during contact etch. In particular, it is demonstrated that photoconduction is triggered in silicon nitride films when they are exposed to plasma during contact etch. As a consequence of this increased conductivity, they act as antennas, being able to collect charges from unstable plasmas and inject them into the gate oxide, thus causing charging damage.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Charging damage during contact etch triggered by increased borderless nitride conductivity\",\"authors\":\"A. Cacciaot, A. Scarpa, S. Evseev, M. Diekema\",\"doi\":\"10.1109/PPID.2003.1199721\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we evaluate the effect of nitride conduction on charging damage during contact etch. In particular, it is demonstrated that photoconduction is triggered in silicon nitride films when they are exposed to plasma during contact etch. As a consequence of this increased conductivity, they act as antennas, being able to collect charges from unstable plasmas and inject them into the gate oxide, thus causing charging damage.\",\"PeriodicalId\":196923,\"journal\":{\"name\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PPID.2003.1199721\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1199721","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文研究了接触蚀刻过程中氮化物传导对充电损伤的影响。特别是，在接触蚀刻过程中，当氮化硅薄膜暴露在等离子体中时，会触发光导。由于电导率的提高，它们就像天线一样，能够从不稳定的等离子体中收集电荷，并将它们注入栅极氧化物中，从而造成充电损伤。

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Charging damage during contact etch triggered by increased borderless nitride conductivity

In this paper we evaluate the effect of nitride conduction on charging damage during contact etch. In particular, it is demonstrated that photoconduction is triggered in silicon nitride films when they are exposed to plasma during contact etch. As a consequence of this increased conductivity, they act as antennas, being able to collect charges from unstable plasmas and inject them into the gate oxide, thus causing charging damage.

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2003 8th International Symposium Plasma- and Process-Induced Damage.

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