R. Goldblatt, B. Agarwala, M. B. Anand, E. Barth, G. Biery, Z. Chen, S. Cohen, J. B. Connolly, A. Cowley, T. Dalton, S.K. Das, C. Davis, A. Deutsch, C. Dewan, D. Edelstein, P.A. Emmi, C. G. Faltermeier, J. Fitzsimmons, J. Hedrick, J. Heidenreich, C. Hu, J. Hummel, P. Jones, E. Kaltalioglu, B.E. Kastenmeier, M. Krishnan, W.F. Landers, E. Liniger, J. Liu, N. Lustig, S. Malhotra, D. Manger, V. McGahay, R. Mih, H. Nye, S. Purushothaman, H. Rathore, S. Seo, T. Shaw, A. Simon, T. Spooner, M. Stetter, R. Wachnik, J. Ryan
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引用次数: 31
摘要
介绍了在0.13 /spl mu/m工艺节点上双大马士革铜与低k介电体的集成。在自旋上的有机金属间介电(SiLK/sup TM/半导体介电)中提供了三种不同金属间距的多达五层铜线。陶氏化学(Dow Chemical Co.)。在两种不同的放松金属螺距下，氟硅酸盐玻璃(FSG)的额外全球布线级别导致总共多达8级的分层布线，以增强BEOL性能。在保持可靠性标准的同时实现了成功的集成。需要开发新的先进单元工艺来满足这项工作所提出的挑战。讨论了图形化和钝化方法。报告的集成方案和材料集的一个关键特征是，与当前一代其他提出的低k集成替代方案相比，其复杂性降低了。
A high performance 0.13 /spl mu/m copper BEOL technology with low-k dielectric
The integration of dual damascene copper with low-k dielectric at the 0.13 /spl mu/m technology node is described. Up to five levels of copper wiring at three different metal pitches is provided in a spin-on organic inter metal dielectric (SiLK/sup TM/ semiconductor dielectric. The Dow Chemical Co.). Additional global wiring levels in fluorosilicate glass (FSG) at two different relaxed metal pitches result in a total of up to eight levels of hierarchical wiring for enhanced BEOL performance. Successful integration was achieved while maintaining reliability standards. Development of new advanced unit processes was required to meet the challenges presented by this work. Patterning and passivation methodologies are discussed. A key feature of the integration scheme and material set reported is the resulting reduction in complexity compared to other proposed low-k integration alternatives for the current generation.
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