A. Hsing, A. Kearney, L. Li, J. Xue, M. Brillhart, R. Dauskardt
{"title":"互连结构的微观力学和损伤过程","authors":"A. Hsing, A. Kearney, L. Li, J. Xue, M. Brillhart, R. Dauskardt","doi":"10.1109/ECTC.2010.5490653","DOIUrl":null,"url":null,"abstract":"Packaging advanced silicon devices has become increasingly challenging because the effects of stresses exerted on interconnect structures during package assembly and operation are not well understood. In this study, a microprobe metrology system is used to assess the mechanics of these interconnect structures. This allows for a better understanding of the robustness of an interconnect design and the stresses that can be tolerated before damage initiation.","PeriodicalId":429629,"journal":{"name":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Micromechanics and damage processes in interconnect structures\",\"authors\":\"A. Hsing, A. Kearney, L. Li, J. Xue, M. Brillhart, R. Dauskardt\",\"doi\":\"10.1109/ECTC.2010.5490653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Packaging advanced silicon devices has become increasingly challenging because the effects of stresses exerted on interconnect structures during package assembly and operation are not well understood. In this study, a microprobe metrology system is used to assess the mechanics of these interconnect structures. This allows for a better understanding of the robustness of an interconnect design and the stresses that can be tolerated before damage initiation.\",\"PeriodicalId\":429629,\"journal\":{\"name\":\"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2010.5490653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2010.5490653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Micromechanics and damage processes in interconnect structures
Packaging advanced silicon devices has become increasingly challenging because the effects of stresses exerted on interconnect structures during package assembly and operation are not well understood. In this study, a microprobe metrology system is used to assess the mechanics of these interconnect structures. This allows for a better understanding of the robustness of an interconnect design and the stresses that can be tolerated before damage initiation.