高纵横比~10 TSV通过最后一个从背过程开发和集成

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI:10.1109/EPTC.2018.8654305

Xiangy-Yu Wang, Hongyu Li

{"title":"高纵横比~10 TSV通过最后一个从背过程开发和集成","authors":"Xiangy-Yu Wang, Hongyu Li","doi":"10.1109/EPTC.2018.8654305","DOIUrl":null,"url":null,"abstract":"As Moore’s law appears to come to the end when the transistor size approaches to its physical scaling limits, peoples begin to look for the new technology to break through the barrier beyond Moore’s law. TSV is one potential option as it could further increase integration density vertically. In this study, a high aspect ratio 10$\\mu \\mathrm{m} \\times100 \\mu$m TSV from the wafer back side is demonstrated and some of the critical process will be discussed.","PeriodicalId":360239,"journal":{"name":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High Aspect Ratio~10 TSV Via-last-from-back Process Development and Integration\",\"authors\":\"Xiangy-Yu Wang, Hongyu Li\",\"doi\":\"10.1109/EPTC.2018.8654305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As Moore’s law appears to come to the end when the transistor size approaches to its physical scaling limits, peoples begin to look for the new technology to break through the barrier beyond Moore’s law. TSV is one potential option as it could further increase integration density vertically. In this study, a high aspect ratio 10$\\\\mu \\\\mathrm{m} \\\\times100 \\\\mu$m TSV from the wafer back side is demonstrated and some of the critical process will be discussed.\",\"PeriodicalId\":360239,\"journal\":{\"name\":\"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPTC.2018.8654305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2018.8654305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

当晶体管尺寸接近其物理尺度极限时，摩尔定律似乎走到了尽头，人们开始寻找超越摩尔定律的新技术。TSV是一个潜在的选择，因为它可以进一步提高垂直整合密度。在本研究中，从晶圆背面展示了高纵横比10$\ \mathrm{m} \times100 \mu$m的TSV，并讨论了一些关键过程。

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High Aspect Ratio~10 TSV Via-last-from-back Process Development and Integration

As Moore’s law appears to come to the end when the transistor size approaches to its physical scaling limits, peoples begin to look for the new technology to break through the barrier beyond Moore’s law. TSV is one potential option as it could further increase integration density vertically. In this study, a high aspect ratio 10$\mu \mathrm{m} \times100 \mu$m TSV from the wafer back side is demonstrated and some of the critical process will be discussed.

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2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)

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