利用Mextram模型对双极晶体管畸变效应进行高级建模

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587854

L. Vreede, H. C. Graaff, Koenraad Mouthaan, M. Kok, J. Tauritz, R. Baets

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引用次数: 30

摘要

考虑了双极晶体管准饱和发生时的畸变效应的建模。在谐波平衡模拟器中实现了Mextram和Gummel - Poon模型的计算结果，并与实测结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced modelling of distortion effects in bipolar transistors using the Mextram model

Modelling of distortion effects in bipolar transistors due to the onset of quasi saturation is considered. Computational results obtained using Mextram and Gummel Poon models as implemented in a harmonic balance simulator are compared with measured results.

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Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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