在npn-AlGaAs/GaAs HBT中采用弹道管状结构改善集电极传输时间

Proceedings of Bipolar/Bicmos Circuits and Technology Meeting Pub Date : 1995-10-02 DOI:10.1109/BIPOL.1995.493861

D.M. Kim, S.H. Song

{"title":"在npn-AlGaAs/GaAs HBT中采用弹道管状结构改善集电极传输时间","authors":"D.M. Kim, S.H. Song","doi":"10.1109/BIPOL.1995.493861","DOIUrl":null,"url":null,"abstract":"In this paper, we propose an improved npn-HBT with pipi-doping collector structure maximally utilizing ballistic transport property with modified electric field distribution in the collector-base space charge region. With pipi-HBT, we obtained significant reduction of /spl tau//sub scr/ compared with those of previously reported conventional and ballistic collector structure HBTs.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improved collector transit time with ballistic pipi-structure in the npn-AlGaAs/GaAs HBT\",\"authors\":\"D.M. Kim, S.H. Song\",\"doi\":\"10.1109/BIPOL.1995.493861\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose an improved npn-HBT with pipi-doping collector structure maximally utilizing ballistic transport property with modified electric field distribution in the collector-base space charge region. With pipi-HBT, we obtained significant reduction of /spl tau//sub scr/ compared with those of previously reported conventional and ballistic collector structure HBTs.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493861\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493861","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在本文中，我们提出了一种改进的npn-HBT，该npn-HBT具有pipi掺杂集电极结构，最大限度地利用了集电极基底空间电荷区电场分布的弹道输运特性。使用pipi-HBT，与之前报道的常规集热器和弹道集热器结构hbt相比，我们获得了/spl tau//sub scr/的显著降低。

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Improved collector transit time with ballistic pipi-structure in the npn-AlGaAs/GaAs HBT

In this paper, we propose an improved npn-HBT with pipi-doping collector structure maximally utilizing ballistic transport property with modified electric field distribution in the collector-base space charge region. With pipi-HBT, we obtained significant reduction of /spl tau//sub scr/ compared with those of previously reported conventional and ballistic collector structure HBTs.

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Proceedings of Bipolar/Bicmos Circuits and Technology Meeting

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