亚四分之一微米SOI CMOS器件的先进Ge预非晶化盐化技术

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623712

Hsiao, Ping Liu, Woo

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引用次数: 8

摘要

提出了一种超薄SO1薄膜的新型杀盐技术。采用Ge预非晶化有利于硅化物在低温(- 400℃)下形成，有效控制硅化物深度而不形成孔洞。使用这种先进技术制造的Sub-0.25 pm SO1 CMOS器件显示出大大降低了源/漏极电阻以及良好的电气效果。

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An Advanced Ge Pre-amorphization Salicide Technology For Sub-quarter-micrometer SOI CMOS Devices

A novel salicide technology for ultra-thin SO1 films is proposed. Ge pre-amorphization is used to facilitate the silicide formation at low tcmperaturc (- 400°C) and effectively control the silicide depth without void formation. Sub-0.25 pm SO1 CMOS devices fabricated using this advanced technology have shown substantially reduced source/drain resistance as well as good electrical results.

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1997 Symposium on VLSI Technology

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