{"title":"采用热蒸发法制备Pb1−xYbxTe基合金薄膜热电发生器并进行表征","authors":"A. Kadhim, A. Abbas, H. A. Hassan","doi":"10.1109/SMELEC.2012.6417245","DOIUrl":null,"url":null,"abstract":"In this work fabricated p-Pb<sub>0.925</sub>Yb<sub>0.075</sub>Te:Te and n-Pb<sub>0.925</sub>Yb<sub>0.075</sub>Te thin films thermoelectric devices are composed of 20-pair and 10-pair deposited on a glass substrate using simple thermal evaporation method. Overall size of thin films thermoelectric generators which consist of 20-pairs and 10-pair of legs connected by aluminum electrodes (Al-electrode) was 23 mm×20 mm and 12 mm×10 mm, respectively. The 20-pair p-n thermocouples in series device generated output maximum open-circuit voltage of 742.7 mV and a maximum output power up to 0.657 μW at temperature difference ΔT = 162 K, and 467.9 mV and 0.346 μW at ΔT = 162 K, for 10-pair, respectively.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and characterization of Pb1−xYbxTe based alloy thin film thermoelectric generators using thermal evaporation method\",\"authors\":\"A. Kadhim, A. Abbas, H. A. Hassan\",\"doi\":\"10.1109/SMELEC.2012.6417245\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work fabricated p-Pb<sub>0.925</sub>Yb<sub>0.075</sub>Te:Te and n-Pb<sub>0.925</sub>Yb<sub>0.075</sub>Te thin films thermoelectric devices are composed of 20-pair and 10-pair deposited on a glass substrate using simple thermal evaporation method. Overall size of thin films thermoelectric generators which consist of 20-pairs and 10-pair of legs connected by aluminum electrodes (Al-electrode) was 23 mm×20 mm and 12 mm×10 mm, respectively. The 20-pair p-n thermocouples in series device generated output maximum open-circuit voltage of 742.7 mV and a maximum output power up to 0.657 μW at temperature difference ΔT = 162 K, and 467.9 mV and 0.346 μW at ΔT = 162 K, for 10-pair, respectively.\",\"PeriodicalId\":210558,\"journal\":{\"name\":\"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2012.6417245\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2012.6417245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication and characterization of Pb1−xYbxTe based alloy thin film thermoelectric generators using thermal evaporation method
In this work fabricated p-Pb0.925Yb0.075Te:Te and n-Pb0.925Yb0.075Te thin films thermoelectric devices are composed of 20-pair and 10-pair deposited on a glass substrate using simple thermal evaporation method. Overall size of thin films thermoelectric generators which consist of 20-pairs and 10-pair of legs connected by aluminum electrodes (Al-electrode) was 23 mm×20 mm and 12 mm×10 mm, respectively. The 20-pair p-n thermocouples in series device generated output maximum open-circuit voltage of 742.7 mV and a maximum output power up to 0.657 μW at temperature difference ΔT = 162 K, and 467.9 mV and 0.346 μW at ΔT = 162 K, for 10-pair, respectively.