{"title":"一种新的容错记忆方案的良率分析","authors":"I. Koren, Z. Koren","doi":"10.1109/ICISS.1996.552434","DOIUrl":null,"url":null,"abstract":"The recent increases in the size of memory ICs have made designers realize that there exists a need for new defect-tolerance techniques, since the traditional methods are no longer effective. One such new technique, the Flexible Multi-Macro (FMM) technique has recently been suggested and implemented in a 1 Gb DRAM circuit. In this paper we present a yield analysis of the FMM design and compare its yield to that of the most common defect-tolerance technique of adding spare rows and columns to the memory array.","PeriodicalId":131620,"journal":{"name":"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Yield analysis of a novel scheme for defect-tolerant memories\",\"authors\":\"I. Koren, Z. Koren\",\"doi\":\"10.1109/ICISS.1996.552434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The recent increases in the size of memory ICs have made designers realize that there exists a need for new defect-tolerance techniques, since the traditional methods are no longer effective. One such new technique, the Flexible Multi-Macro (FMM) technique has recently been suggested and implemented in a 1 Gb DRAM circuit. In this paper we present a yield analysis of the FMM design and compare its yield to that of the most common defect-tolerance technique of adding spare rows and columns to the memory array.\",\"PeriodicalId\":131620,\"journal\":{\"name\":\"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICISS.1996.552434\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICISS.1996.552434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Yield analysis of a novel scheme for defect-tolerant memories
The recent increases in the size of memory ICs have made designers realize that there exists a need for new defect-tolerance techniques, since the traditional methods are no longer effective. One such new technique, the Flexible Multi-Macro (FMM) technique has recently been suggested and implemented in a 1 Gb DRAM circuit. In this paper we present a yield analysis of the FMM design and compare its yield to that of the most common defect-tolerance technique of adding spare rows and columns to the memory array.