一种新的容错记忆方案的良率分析

I. Koren, Z. Koren
{"title":"一种新的容错记忆方案的良率分析","authors":"I. Koren, Z. Koren","doi":"10.1109/ICISS.1996.552434","DOIUrl":null,"url":null,"abstract":"The recent increases in the size of memory ICs have made designers realize that there exists a need for new defect-tolerance techniques, since the traditional methods are no longer effective. One such new technique, the Flexible Multi-Macro (FMM) technique has recently been suggested and implemented in a 1 Gb DRAM circuit. In this paper we present a yield analysis of the FMM design and compare its yield to that of the most common defect-tolerance technique of adding spare rows and columns to the memory array.","PeriodicalId":131620,"journal":{"name":"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Yield analysis of a novel scheme for defect-tolerant memories\",\"authors\":\"I. Koren, Z. Koren\",\"doi\":\"10.1109/ICISS.1996.552434\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The recent increases in the size of memory ICs have made designers realize that there exists a need for new defect-tolerance techniques, since the traditional methods are no longer effective. One such new technique, the Flexible Multi-Macro (FMM) technique has recently been suggested and implemented in a 1 Gb DRAM circuit. In this paper we present a yield analysis of the FMM design and compare its yield to that of the most common defect-tolerance technique of adding spare rows and columns to the memory array.\",\"PeriodicalId\":131620,\"journal\":{\"name\":\"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICISS.1996.552434\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 Proceedings. Eighth Annual IEEE International Conference on Innovative Systems in Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICISS.1996.552434","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

最近内存ic尺寸的增加使设计人员意识到,由于传统方法不再有效,因此需要新的容错技术。其中一种新技术,柔性多宏(FMM)技术最近被提出并在1gb DRAM电路中实现。在本文中,我们提出了FMM设计的良率分析,并将其良率与最常见的向存储器阵列中添加备用行和列的缺陷容忍技术的良率进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Yield analysis of a novel scheme for defect-tolerant memories
The recent increases in the size of memory ICs have made designers realize that there exists a need for new defect-tolerance techniques, since the traditional methods are no longer effective. One such new technique, the Flexible Multi-Macro (FMM) technique has recently been suggested and implemented in a 1 Gb DRAM circuit. In this paper we present a yield analysis of the FMM design and compare its yield to that of the most common defect-tolerance technique of adding spare rows and columns to the memory array.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信